Growth and properties of HgTe-CdTe and other Hg-based superlatticesFAURIE, J.-P.IEEE journal of quantum electronics. 1986, Vol 22, Num 9, pp 1656-1665, issn 0018-9197Article

Zn(MgBe)Se ultraviolet photodetectorsVIGUE, F; FAURIE, J.-P.Journal of electronic materials. 2001, Vol 30, Num 6, pp 662-666, issn 0361-5235Conference Paper

Experimental relation between cut-off wavelength and HgTe layer thickness for HgTe-CdTe superlatticesRENO, J; FAURIE, J. P.Applied physics letters. 1986, Vol 49, Num 7, pp 409-410, issn 0003-6951Article

Le fil à couper.... ou comment détecter des fissures de fatigue = How to detect the fatigue crack by fracture of a wireFAURIE, J. P; VEROT, J.CETIM informations. 1985, Num 90, pp 48-51, issn 0399-0001Article

Certification d'entreprises : l'enjeu d'une reconnaissance internationale = Firms certification: the stake of a international recognitionFAURIE, J.-P; GARNIER, C.CETIM informations. 1991, Num 123, pp 23-27, issn 0399-0001Article

Defect density in ZnSe pseudomorphic layers grown by molecular beam epitaxy on to various GaAs buffer layersBOUSQUET, V; TOURNIE, E; FAURIE, J.-P et al.Journal of crystal growth. 1998, Vol 192, Num 1-2, pp 102-108, issn 0022-0248Article

Nitrogen precursors in metalorganic vapor phase epitaxy of (Al,Ga)NBEAUMONT, B; GIBART, P; FAURIE, J. P et al.Journal of crystal growth. 1995, Vol 156, Num 3, pp 140-146, issn 0022-0248Article

Properties of radiative recombinations in HgTe-CdTe heterostructuresOLEGO, D. J; FAURIE, J. P.Physical review. B, Condensed matter. 1986, Vol 33, Num 10, pp 7357-7360, issn 0163-1829Article

Evaluation of the potential of ZnSe and Zn(Mg)BeSe compounds for ultraviolet photodetectionVIGUE, F; TOURNIE, E; FAURIE, J.-P et al.IEEE journal of quantum electronics. 2001, Vol 37, Num 9, pp 1146-1152, issn 0018-9197Article

Magnetotransport properties of p-type HgTe-CdTe superlatticesWOO, K. C; RAFOL, S; FAURIE, J. P et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 8, pp 5996-5999, issn 0163-1829, part 2Article

Essais spéciaux: organes de transmissions. Essais de fatigue des structures = Special testing: drive components. Fatigue testing of structuresCHARENTUS, A; ROUCHOUSE, G; FAURIE, J. P et al.CETIM informations. 1983, Num 83, pp 78-84, issn 0399-0001Article

Molecular beam epitaxy of Hg_1-xCd_xTe : growth and characterizationFAURIE, J.-P.Progress in crystal growth and characterization of materials. 1994, Vol 29, Num 1-4, pp 85-159, issn 0960-8974Article

High-quality p-type HgCdTe grown by molecular beam epitaxyWIJEWARNASURIYA, P. S; BOUKERCHE, M; FAURIE, J. P et al.Journal of applied physics. 1990, Vol 67, Num 2, pp 859-862, issn 0021-8979Article

Molecular beam epitaxy 1998FAURIE, J.-P; ETIENNE, B; MASSIES, J et al.Journal of crystal growth. 1999, Vol 201202, issn 0022-0248, 1283 p.Conference Proceedings

Ètude de ZnSe et d'hétérostructures associées pour l'application laser bleu = Fundamental studies of ZnSe, related alloys and heterostructures for blue laser applicationMorhain, Christian; Faurie, J.-P.1996, 161 p.Thesis

Minority-carrier lifetime in p-type (111)B HgCdTe grown by molecular-beamDE SOUZA, M. E; BOUKERCHE, M; FAURIE, J. P et al.Journal of applied physics. 1990, Vol 68, Num 10, pp 5195-5199, issn 0021-8979, 5 p.Article

Investigations by high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy (TEM) of (BeTe/ZnSe) superlattices grown by molecular beam epitaxy onto GaAs buffer epilayerBOUSQUET, V; LAÜGT, M; VENNEGUES, P et al.Journal of crystal growth. 1999, Vol 201202, pp 498-501, issn 0022-0248Conference Paper

Wide-band-gap ZnMgBeSe alloys grown onto GaAs by molecular beam epitaxyTOURNIE, E; VIGUE, F; LAÜGT, M et al.Journal of crystal growth. 2001, Vol 223, Num 4, pp 461-465, issn 0022-0248Article

Heterojunction and interface space charge effects on interstitial Be diffusion during molecular beam epitaxy (MBE) growthPAO, Y.-C.Journal of crystal growth. 1999, Vol 201202, pp 202-205, issn 0022-0248Conference Paper

InGaN-based blue light-emitting diodes and laser diodesNAKAMURA, S.Journal of crystal growth. 1999, Vol 201202, pp 290-295, issn 0022-0248Conference Paper

Compositional dependence of the Raman frequencies and line shapes of Cd_1-xZn_xTe determined with films grown by molecular-beam epitaxyOLEGO, D. J; RACAH, P. M; FAURIE, J. P et al.Physical review. B, Condensed matter. 1986, Vol 33, Num 6, pp 3819-3822, issn 0163-1829Article

Structural properties of Hg_1-xZn_x Te-CdTe strained layer suprlattices and the reduction of threading dislocations from a CdTe buffer layerPETRUZZELLO, J; OLEGO, D; CHU, X et al.Journal of applied physics. 1989, Vol 66, Num 7, pp 2980-2983, issn 0021-8979, 4 p.Article

Relation between crystallographic orientation and the condensation coefficients of Hg, Cd, and Te during molecular-beam-epitaxial growth of Hg_1-xCd_xTe and CdTeSIVANANTHAN, S; CHU, X; RENO, J et al.Journal of applied physics. 1986, Vol 60, Num 4, pp 1359-1363, issn 0021-8979Article

Growth of Hg_1-xZn_xTe by molecular beam epitaxy on a GaAs(100) substrateSIVANANTHAN, S; CHU, X; BOUKERCHE, M et al.Applied physics letters. 1985, Vol 47, Num 12, pp 1291-1293, issn 0003-6951Article

Ferromagnet/semiconductor hybrid structures grown by molecular-beam epitaxyTANAKA, M.Journal of crystal growth. 1999, Vol 201202, pp 660-669, issn 0022-0248Conference Paper